Download Applications of silicon-germanium heterostructure devices by C.K Maiti, G.A Armstrong PDF

By C.K Maiti, G.A Armstrong

The main major characteristic of this paintings is that it combines 3 precise themes - know-how, machine layout and simulation, and functions - in a entire approach.


This booklet is meant to be used via senior undergraduate or first-year graduate scholars in utilized Physics, digital and electric Engineering, and fabrics Sciences, and as a reference for engineers and scientists fascinated by semiconductor machine examine and improvement for RF functions.

Show description

Read or Download Applications of silicon-germanium heterostructure devices PDF

Similar electrical & electronic engineering books

Lithium Ion Batteries: Fundamentals and Performance

Rechargeable Batteries with excessive power density are in nice call for as strength assets for varied reasons, e. g. handies, 0 emission electrical cars, or load leveling in electrical strength. Lithium batteries are the main promising to satisfy such wishes as a result of their intrinsic discharbe voltage with quite mild weight.

Mobile Communications Handbook Engineering

In one quantity, The cellular Communications instruction manual covers the full box, from ideas of analog and electronic communications to cordless phones, instant neighborhood sector networks (LANs), and overseas expertise criteria. the superb scope of the instruction manual guarantees that it'll be the first reference for each element of cellular communications.

Energy Management Handbook, 4th edition

Revised and up to date instruction manual for strength administration pros and engineers. beneficial properties up to date and new chapters on boilers, lighting fixtures and electrical energy, HVAC process optimization, fuel software expense schedules, and a bunch of myriad themes of present curiosity within the box. prior variation: c1996. DLC: strength resources--Handbooks, manuals, and so on.

Polymers for Electronic & Photonic Application

The latest advances within the use of polymeric fabrics through the digital are available in Polymers for digital and Photonic functions. This bookprovides in-depth insurance of photoresis for micro-lithography, microelectronic encapsulants and packaging, insulators, dielectrics for multichip packaging,electronic and photonic purposes of polymeric fabrics, between many different subject matters.

Additional info for Applications of silicon-germanium heterostructure devices

Example text

Mechanical equilibrium theory assumes the existence of a threading dislocation. The energy required to glide a threading dislocation into a misfit dislocation is balanced with the strain energy from the lattice mismatch to define the critical thickness as a function of lattice mismatch. 3. Critical layer thickness versus Ge content showing stable, metastable and relaxed ranges of Si1−x Gex layers on Si. (After Schuppen A et al 1995 J. Mater. , Mater. Electron. ) relieve the strain energy. 042x. For a detailed derivation of the critical thickness, the reader may refer to an excellent review by Jain and Hayes [8].

Pp 109–16 [54] Lanzerotti L D, St Amour A, Liu C W, Sturm J C, Watanabe J K and Theodore N D 1996 Si/Si1−x−y Gex Cy /Si heterojunction bipolar transistors IEEE Electron Device Lett. 17 334–7 [55] Osten H J, Knoll D, Heinemann B and Tillack B 1998 Carbon doping of SiGe heterobipolar transistors Proc. Silicon Monolithic Integrated Circuits in RF Systems pp 19–23 [56] Osten H J, Knoll D, Heinemann B and Schley P 1999 Increasing process margin in SiGe heterojunction bipolar technology by adding carbon IEEE Trans.

Therefore, much shorter channel lengths (down to 20 nm) become feasible. At the source side of the device, a heterojunction is used which keeps the barrier for conduction in the off-state constant and not affected by the drain voltage. In order to have conduction in the on-state, the source side closest to the channel region is intrinsic. This allows for Fermi-level modulation by the action of the overlapping gate and thus conduction. The DIBL effect no longer exists [68]. The experimental evidence of the enhancement of out-of-plane hole mobility in SiGe using a vertical p-MOSFET structure, fabricated by high-dose Ge implantation followed by solid phase recrystallization, has been reported [69].

Download PDF sample

Rated 4.44 of 5 – based on 40 votes