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For example, annealing process of thin films (~ 15 nanometers) was carried out in [23, 28  32] for 10 – 30 s at 1000  1200 C, that made possible to form oxides, which, by their electrical parameters, are equal to the films, fabricated by thermal method. In reference [29], silicon oxidation in dry oxygen was alternated with annealing in argon at 900 C. Furthermore, we could observe the dependence of the oxide thickness on the annealing time between cycles of oxidation. It is assumed that a very rapid growth of the oxide (see Figure 2, curve 4) is related to the stress relaxation and perhaps with change of the charge states that affect the film growth rate.

Reference [81] overviews the photoluminescence of the SiO2 layers, formed by the anodic electrochemical oxidation of β-SiС films. It was demonstrated that the oxide film thickness increases with increasing the sample oxidation time. However, all the silicon oxide films kept traces of carbon uniformly distributed through the volume. The authors of [81] suggest two explanations of the observed photoluminescence mechanism: (1) The electrochemical oxide, formed on the SiC film, contains certain local centers (complexes).

The atomic oxygen is formed by dissociation of the adsorbed ozone molecules on the hot substrate surface. 22 eV [24]), and with rising temperature a usual thermal oxidation reaction starts to prevail. If we use other gases as additives to the oxygen atmosphere, it is important to consider their dissociation processes that, in some cases have a rapid character [31]. Light flux, passing through the oxidant atmosphere, reaches Si  SiO2 system, where part of the radiation is absorbed, that leads to heating up the silicon substrate [3, 25].

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